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| inchange semiconductor isc product specification isc silicon npn power transistor BUT211 description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min.) high speed switching applications designed for high frequency el ectronic lighting ballast applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 850 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current-continuous 5 a i cm collector current-peak 10 a i b b base current-continuous 2 a i bm base current-peak 4 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUT211 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0; l= 25mh 400 v v ce( sat ) collector-emitter saturation voltage i c = 3a; i b = 0.4a b 2.0 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 0.4a b 1.3 v i ces collector cutoff current v ce = 850v; v be = 0 v ce = 850v; v be = 0; t j = 125 1.0 2.0 ma i ebo emitter cutoff current v eb = 9v; i c = 0 10 ma h fe-1 dc current gain i c = 1a; v ce = 2v 13 30 h fe-2 dc current gain i c = 3a; v ce = 2v 7.5 switching times; resistive load t s storage time 2.0 s t f fall time i c = 3a; i b1 = 0.3a; i b2 = -0.6a 0.8 s ? h fe- 1 classifications 1 2 3 13-20 18-25 23-30 isc website www.iscsemi.cn |
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